TPH3208PS 650V Cascode GaN FET in TO-220 (drain tab)
Key Specifications
|
Vds (V) min
|
650
|
Vtds (V) max
|
800
|
Rds(on) (mΩ) max*
|
130
|
Qrr (nC) typ
|
54
|
Qg (nC) typ
|
14 |
* Includes dynamic R(on)
Features
- Easy to drive—compatible with standard gate drivers
- Low conduction and switching losses
- Low Qrr of 54nC—no free-wheeling diode required
- GSD pin layout improves high speed design
- JEDEC-qualified GaN technology
- RoHS compliant and Halogen-free
Benefits
- Increased efficiency through fast switching
- Increased power density
- Reduced system size and weight
- Enables more efficient topologies—easy to implement bridgeless totem-pole designs
- Lower BOM cost
Applications
- Renewable energy
- Industrial
- Automotive
- Telecom and datacom
- Servo motors