TPH3206PSB 650V Cascode GaN FET in TO-220 (source tab)
Key Specifications
|
Vds (V) min
|
650
|
Vtds (V) max
|
800
|
Rds(on) (mΩ) max*
|
180
|
Qrr (nC) typ
|
52 |
Qg (nC) typ
|
6.2 |
Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and Halogen-free packaging
Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor