GaN Devices

Transphorm

Gallium Nitride (GaN) devices offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. Transphorm is a leading-edge wide band gap supplier with world-class innovation and a portfolio of fully-qualified GaN transistors that enables increased performance and reduced overall system size and cost for high-voltage power conversion applications.


TPH3205

650V Cascode GaN FET Ron=60mΩ

TPH3206

600/650V Cascode GaN FET Ron=180mΩ

TPH3207

650VCascode GaN FET Ron=41mΩ

TPH3208

650V Cascode GaN FET Ron=130mΩ

TPH3212

650V Cascode GaN FET Ron=85mΩ